发明名称 COMPLEMENTARY MOS TYPE GATE CIRCUIT
摘要 PURPOSE:To reduce the current consumption, by setting the output signal level with the first or second CP after setting MOSFET of the gate circuit to a given state with the input signal and by eliminating the switching current. CONSTITUTION:When the input SIN is from H to L, CPphi1 in synchronizing with this is in L for t1, pMOSTQ1,Q2 are sequentially turned on, and the output SOUT is in H. CPphi2 is in L during DELTAt when the Q1 and Q2 are switched and nMOSTQ4 is turned off, and the switching current is very slight. When SIN is from L to H, Q2 is turned off and nMOSTQ3 is turned on. CPphi1 is in L during t1, but SOUT is held at H because Q2 is turned off. After DELTAt, phi2 is in H and Q4 is turned on. At this time, since Q3 is turned on, SOUT is at L. When Q4 is switched, phi1 is already in H and Q1 is turned off, then no switching current is flowed from VDD to ground. Thus, total cosuming current can be reduced.
申请公布号 JPS5466763(A) 申请公布日期 1979.05.29
申请号 JP19770133223 申请日期 1977.11.07
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 TSUKISHIRO SHIZUO
分类号 H03K19/096;H03K19/00 主分类号 H03K19/096
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