| 摘要 |
PURPOSE:To make easy to form fine pattern, by taking the methacryl acid ester as fundamental construction, obtaining the resist of molecule construction of three dimensional mesh through copolymer of functional monomer having carboxyl group and acid chloride, and developing with acetic acid alkyl system solvent after exposure. CONSTITUTION:The copolymer consisting of methylmethachrylate 94.0mol%, methacrylic acid 4.5mol%, methacrylic acid chloride 2.5mol% is synthesized by solution polymerization. Next, this is solved into 2.ethoxyethylacetate, is coated on the silicon substrate with spinner, constituting into the resist of three dimensional mesh molecule construction with heating at 200 deg.C for 15 minutes. After that, electron rays are exposed, drawing the pattern and developed for 1 to 3 minutes in the acetic acid n-propyl at 20 deg.C. Thus, the sensitivity of resist is remarkably higher and it is suited to form fine pattern. |
