发明名称 PATTERN FORMATION MATERIAL
摘要 PURPOSE:To enhance sensitivity, as well as heat resistance, contrast, resolution, etc., by using a specified copolymer for a positive tye resist material for use in ionizing raidation and ultraviolet lithography. CONSTITUTION:As functional monomers participating in cross-linking reaction, 2-20 mole % of methacrylamide and 0.4-20 mole % of methacryloyl chloride are selected and they are copolymerized with 70-97 mole %. This copolymer is dissolved in a solvent and coated on a substrate. Subsequent heating causes dehydrochlorination, imide type cross-linking, formation of 3-dimensional network structure, and insolubilization in solvents. Then, patterns are formed by irradiating ionizing radiation, and the part of patterns are dissolved selectively in a developing solvent.
申请公布号 JPS5466122(A) 申请公布日期 1979.05.28
申请号 JP19770133336 申请日期 1977.11.07
申请人 FUJITSU LTD 发明人 YONEDA YASUHIRO;KITAKOUJI TOSHISUKE;KITAMURA TATEO
分类号 C08F220/00;C08F20/52;C08F220/04;C08F220/10;G03F7/039;H01L21/027 主分类号 C08F220/00
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