| 摘要 |
PURPOSE:To form the second metal film between the two first metal film with good efficiency and accuracy by removing the portions of the second film which are on the first films and in contact with the same, by photoetching, formed on a substrate. CONSTITUTION:Two first metal films 5, 5 are formed on substrate 3, leaving a predetermined space, and resist films 8, 8 are formed on the films. Next, second metal film 7a is formed on n-type layer 1 of substrate 3 including films 8, 8. The portion of film 7a which is on one of films 5 and in contact with the same is removed by etching using a photomechanical process with resist film 9. The portion of film 7a which is on the other film 5 and in contact with the same is removed, leaving gate electrode metal film 7, and resist films 8, 10 are removed. Thus, the second metal film of desired width and thickness can be formed accurately at the desired position. |
