| 摘要 |
PURPOSE:To eliminate the efect of flaw caused on the opaque film of mask, by using a plurality of masks providing the same pattern as a mask, when exposure is made for the photo resist film formed on the semiconductor wafer via the mask. CONSTITUTION:The SiO2 film 2 is coated on the surface of the Si wafer 1, and the photo resist film 3 is coated, and exposure is made by radiating ultraviolet rays 7 by placing the glass mask on which opaque pattern is provided. At this time, as the glass mask, the glass masks 41 and 42 consisting of the two transparent glass substrates 51 and 52 forming the opaque films 61 and 62 of the same pattern are used and these films 61 and 62 are superimposed with alignment. Thus, if there is a flaw on the opaque film 62 of the mask 42, it is covered with the film 61 of the mask 41 and the effect due to the flaw is not caused. |
