| 摘要 |
<p>PURPOSE:To raise the oxidation resistance, the stability of resistance value, and resistivity value by forming tungsten borate thermogenous resistor by electronic beam deposition or sputtering and then by covering it with a protective layer with an electric conductor. CONSTITUTION:The surface of the insulated base plate 1 is covered with the tungsten borate thermogenous resistor 2, the electric conductor 3 for power supply, and the protective layer of SiO2, Ta2O5, Al2O3, MgO, etc., or a multilayer of these components for protecting the resistor 2 and the conductor 3. The formation of the tungsten borate film is made by electronic beam deposition or sputtering. The heating of the base plate being processed forming the film at 200 to 500 deg.C makes the adhesivencess of the film better, and also the aftertreatment of the base plate at 200 to 650 deg.C results in the regulation and stabilization of resistance value. The sputtering is made in Ar gas of 10<-3> to 5X10<-1> Torr when the target used is tungsten borate or W and B, but in a mixed gas of Ar and diborane when the target is W alone.</p> |
