| 发明名称 |
Method of manufacturing power semiconductors with pressed contacts |
| 摘要 |
The invention relates to a method of manufacturing power semiconductors with pressed contacts and with an interdigitated structure. The thickest contact metal coverings are formed by application of a metal layer by serigraphy on a first thin metal layer deposited by evaporation in a vacuum.
|
| 申请公布号 |
US4155155(A) |
申请公布日期 |
1979.05.22 |
| 申请号 |
US19780868242 |
申请日期 |
1978.01.10 |
| 申请人 |
ALSTHOM-ATLANTIQUE |
发明人 |
BOURDON, BERNARD;SIFRE, GASTON |
| 分类号 |
H01L21/285;H01L23/051;H01L23/48;H01L29/417;H01L29/423;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
