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发明名称
VAPOURRPHASE GROWTH METHOD FOR 335 GROUP COMPOUND SEMICONDUCTOR
摘要
申请公布号
JPS5463673(A)
申请公布日期
1979.05.22
申请号
JP19770129927
申请日期
1977.10.28
申请人
NIPPON ELECTRIC CO
发明人
YOSHIDA MASAJI
分类号
H01L29/80;H01L21/205;H01L21/338;H01L29/812
主分类号
H01L29/80
代理机构
代理人
主权项
地址
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