| 摘要 |
<p>Hyperfrequency (>3GHz) transistors are formed on a silicon semiconductor substrate by deposition of an n-type layer on an n + type Si substrate deposition thereon of a layer of SiO2 dopes with As. obtd by oxidation of an As cpd. diffusion of the emitter by heating in O2, local deposition of n-type silicon and forming an emitter on the As-doped SiO2 with a layer of B-doped SiO2 finally diffusion, of the base across the emitter by heating in oxygen. The field due to the conc. of As reduces the coefficient of diffusion of the B, so that fine bases can be obtd.</p> |
