| 摘要 |
<p>PURPOSE:To enable to grown continuous poly-layer crystal, by interrupting the original crystal substrate from the vapor of source at temperature increase or decrease of the heating furnace and by sequentially shifting it on each growing tube. CONSTITUTION:When temperature is decreased after the heating furnace is increased in temperature to a given value and crystal is grown, the substrate 4 is shifted to the position in Figure, avoiding unnecessary condensing material from being attached. When the temperature of heating furnace reaches a given temperature, the substrate 4 is shifted on each growing tube, for example, position of A and B with the manipulater 8, forming continuously the polycrystal growing layer.</p> |
