发明名称 |
SEMICONDUCTOR DEVICE HAVING AN AMORPHOUS SILICON ACTIVE REGION |
摘要 |
<p>A SEMICONDUCTOR DEVICE HAVING AN AMORPHOUS SILICON ACTIVE REGION A semiconductor device including a body of amorphous silicon fabricated by a glow discharge in silane and a metallic region on a surface of the body of amorphous silicon providing a surface barrier junction at the interface of the region and the body which is capable of generating a space charge region in the body of amorphous silicon.</p> |
申请公布号 |
GB1545897(A) |
申请公布日期 |
1979.05.16 |
申请号 |
GB19760028052 |
申请日期 |
1976.07.06 |
申请人 |
RCA CORP |
发明人 |
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分类号 |
H01L31/04;H01L21/00;H01L21/205;H01L21/28;H01L29/00;H01L29/04;H01L29/43;H01L31/068;H01L31/07;H01L31/075;H01L31/10;H01L31/20;(IPC1-7):01L21/205;01J17/32 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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