发明名称 SEMICONDUCTOR DEVICE HAVING AN AMORPHOUS SILICON ACTIVE REGION
摘要 <p>A SEMICONDUCTOR DEVICE HAVING AN AMORPHOUS SILICON ACTIVE REGION A semiconductor device including a body of amorphous silicon fabricated by a glow discharge in silane and a metallic region on a surface of the body of amorphous silicon providing a surface barrier junction at the interface of the region and the body which is capable of generating a space charge region in the body of amorphous silicon.</p>
申请公布号 GB1545897(A) 申请公布日期 1979.05.16
申请号 GB19760028052 申请日期 1976.07.06
申请人 RCA CORP 发明人
分类号 H01L31/04;H01L21/00;H01L21/205;H01L21/28;H01L29/00;H01L29/04;H01L29/43;H01L31/068;H01L31/07;H01L31/075;H01L31/10;H01L31/20;(IPC1-7):01L21/205;01J17/32 主分类号 H01L31/04
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