| 摘要 |
<p>PURPOSE:To protect an active element surface and a static electricity breakdown by executing dicing on a scribe line by providing the scribe line achieving dicing on the rear surface which is opposite to the active element surface formed on a wafer. CONSTITUTION:First of all, an active element formed by repeating oxidation, diffusion, etching, etc., is formed on the surface of a wafer. After that. after lapping the rear surface to approximately 200mum by lapping technology, an SiO2 film is formed on this rear surface by the CVD process. After that, Al is sputtered to the entire surface and the shape of a scribe line 2 is etched in grid shape. Also, the scribe line 2 formed in this grid shape is formed so that an active area on the surface may be included. Then, the wafer and the scribe line 2 are subject to recognition and cutting by the dicing process and laser or a pattern recognition device for producing a semiconductor device.</p> |
