发明名称 |
COMPENSATION ELEMENT FOR DYNAMIC SEMICONDUCTOR STORES,AND METHOD OF OPERATING THE SAME |
摘要 |
<p>The invention relates to a dummy cell for a dynamic semiconductor store, employing an evaluator circuit and connected therewith bit lines and storage elements adapted to be selectively connected therewith. The dummy cell may be selected through a dummy cell selector line and in its selected stage is connected to any bit line which is not busy with the read-out of a storage element. The dummy cell comprises a dummy cell condenser through which any connected bit line receives a correcting voltage raising its potential to a middle potential of UBD= 0.5 (UBO+ UBl). UBO corresponds to the read-out voltage on the bit line during the read-out of a binary "O" and UBl corresponds to the read-out voltage on the bit line during the read-out of a binary "1". This mode of operation increases the read-out sensitivity.</p> |
申请公布号 |
CA1054712(A) |
申请公布日期 |
1979.05.15 |
申请号 |
CA19750234237 |
申请日期 |
1975.08.27 |
申请人 |
SIEMENS AG |
发明人 |
MEUSBURGER G;WOTRUBA G |
分类号 |
G11C11/401;G11C11/404;G11C11/4099;(IPC1-7):11C7/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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