发明名称 COMPENSATION ELEMENT FOR DYNAMIC SEMICONDUCTOR STORES,AND METHOD OF OPERATING THE SAME
摘要 <p>The invention relates to a dummy cell for a dynamic semiconductor store, employing an evaluator circuit and connected therewith bit lines and storage elements adapted to be selectively connected therewith. The dummy cell may be selected through a dummy cell selector line and in its selected stage is connected to any bit line which is not busy with the read-out of a storage element. The dummy cell comprises a dummy cell condenser through which any connected bit line receives a correcting voltage raising its potential to a middle potential of UBD= 0.5 (UBO+ UBl). UBO corresponds to the read-out voltage on the bit line during the read-out of a binary "O" and UBl corresponds to the read-out voltage on the bit line during the read-out of a binary "1". This mode of operation increases the read-out sensitivity.</p>
申请公布号 CA1054712(A) 申请公布日期 1979.05.15
申请号 CA19750234237 申请日期 1975.08.27
申请人 SIEMENS AG 发明人 MEUSBURGER G;WOTRUBA G
分类号 G11C11/401;G11C11/404;G11C11/4099;(IPC1-7):11C7/00 主分类号 G11C11/401
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