| 摘要 |
PURPOSE:To adjust the power strength between both electrodes and reduce cleaning time by changing the spacing between the upper electrode for high voltage application provided in a hermetic bell-jar and a lower electrode for mounting semiconductor wafers having been formed with film through mechanical vertical movement of the electrodes. CONSTITUTION:An opening through which an electrode shaft 11 supporting an upper electrode 2 penetrates is provided on the wall in the upper part of a bell jar 1 and a bellows keep fitting 19 is secured to the edge part of said opening. A bellows 17 is set between this fitting and th bellows keep fitting 18 provided in the upper part, producing an expandable space. Next, the upper electrode 2 is disposed in opposition to the lower electrode 3 to be placed with wafers 9 disposed in the bell-jar 1, and the electrode shaft 11 incased with an insulation cylinder 13 having a protrusion 13a is secured thereto by means of a support fitting 12. The upper bellows keep fitting 18 and the protrusion 13a of the insulation cylinder 13 are held closely contacted to hermetically seal the space formed with the bellows 17. The interelectrode spacing is changed by moving the upper electrode 2 through the vertical movement of the operating lever 22 contact to the bottom of the fitting 18. |
