| 摘要 |
<p>PURPOSE:To secure sufficient resistance to both the heat and pressure for the lead at the heat pressure-bonding time, by connecting the internal wiring layer on the substrate and the vamp terminal via the stress reduction region. CONSTITUTION:Ti13, Pt14 and gold thin film 15 are provided on insulating film 12 composed of SiO2 and Si3N3 on Si substrate 11. In this structure, vamp part 110 contains layer 13 and 14 as the lowest layers, layer 15 as the intermediate layer and layer 16 as the highest layer respectively (layers 13-15 for wiring layer 210) in a two-step structure; and stress reduction region 310 contains layer 13 and 14 as the lower layers and layer 15 as the upper layer. And the plane is formed into the ladder-form to maximize the reducing efefct of the thermal strain caused by the wiring layer. When vamp part features 100mum with 10mum of the angular wiring width, the reduction region length L is preferably set to 5-50mum. To reduce the stress occurring at film 12 around layer 13, the area between layer 14 and 15 is formed in steps. In such way, the crack occurrence is reduced at the vamp bottom part, thus ensuring a high-rquality and high-eliability junction.</p> |
