Dual dielectric field effect storage transistor - has channel zone in form of closed figure, so that source completely surrounds drain, or vice=versa

摘要

The FET's gate insulating layer consists of two layers with different dielectrics. The gate electrode is placed in the channel area between the source and drain. During operation the source potential is between the drain and substrate potentials, or at the substrate potential. The channel zone (3) forms a closed figure, so that either the source (1) completely surrounds the drain (2), or vice-versa. This arrangement ensures that the 'sidewalls' effect is eliminated without effecting the long term operation of a storage matrix in which the transistor is used.