| 摘要 |
A dynamic semiconductor storage element comprises an MOS-storage capacitor (1,3,4) arranged on a semiconductor layer (4) of one conductivity type. This capacitor is fed with the charge to be stored via a bit line (5) constituted by a strip-shaped buried layer of the opposite conductivity type. A portion of the word line (1) forms a conductor path which is arranged above and insulated from the semiconductor layer (4) and serves as the outer electrode of the storage capacitor. In storage elements of this type, the drive voltage range on the word line is kept low by increasing the doping of the semiconductor layer (4) from its surface with the insulating layer (3) to a depth of a few 100 nm. The invention is particularly suitable for highly integrated storage components. <IMAGE> |
