Passivated semiconductor devices - esp. mesa diodes, where edges of pn junctions are covered by film of silica

摘要

Device is made from a semiconductor substrate which has an active surface and another surface on the opposite side of the substrate, which contains >=1 pn-junction in a plane parallel with the active surface. The substrate (partly) coated with a thin passivating layer; and >=1 metal contact is applied to the active surface. Passivating layer and at least the surface of the metal have a feeble or zero mutual adhesion; and the active surface has horizontal, vertical, and sloping zones. Used esp. in the mfr. of mesa devices, where the pn junction extend to the periphery of the mesa.