发明名称 PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To produce good-quality semiconductor devices in mass production by providing a desired-pattern metallic layer and causing a soldering paste layer to adhere to it by printing, and heating and solidifying this layer to form a uniform soler layer. CONSTITUTION:Soldering paste 5 is caused to adhere only onto layer 3 of Si substrate 1, where metallic layer 3 is provided, by screen printing. Next, the substrate is heated at 100 deg.C for about 50 minutes, and the paste is solidified to form a uniform-thickness film. After that, the substrate is divided into chips, and chips are brought into contact with prescribed metallic electrodes and are heated over a solder melting point and are soldered. The thickness of the solder layer is arbitrarily controlled between 30mu and 100mu by this method, so that semiconductor devices can be produced in mass production without solder fatigue and the increment of power loss.
申请公布号 JPS5457957(A) 申请公布日期 1979.05.10
申请号 JP19770125481 申请日期 1977.10.18
申请人 发明人
分类号 H01L21/60;H01L21/28;H01L21/301;H01L21/302;H01L21/52 主分类号 H01L21/60
代理机构 代理人
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