Integrated semiconductor switching element - has bipolar transistor whose base is coupled to substrate by first conductivity channel

摘要

The switching element for rapid action is based on a bipolar transistor integrated on a substrate (1) of first conductivity in a vertical series. Next to the substrate is provided a collector zone of opposite conductivity, then a base zone (3) of first conductivity, and finally an emitter zone of opposite conductivity. The base zone and the substrate are connected by a channel (5) of the substrate conductivity. The channel width is similar to the double max. thickness of the layer (14) of the space charge in the pn-junction between the collector zone and the channel.