发明名称 |
Method for forming a surface relief pattern in a poly(olefin sulfone) layer |
摘要 |
This invention pertains to an electron beam resist method for forming a surface relief pattern in a poly(olefin sulfone) layer wherein the polymer layer is useful as a sputter etch mask for transferring the surface relief pattern into a metal layer. The surface relief pattern is formed using poly(3-methyl-1-cyclopentene sulfone) as the poly(olefin sulfone) layer and using a mixture of 2-methylcyclohexanone and 2-methylcyclohexanol or a mixture of benzene and 2-methylcyclohexanol as the developer for the poly(3-methyl-1-cyclopentene sulfone) layer.
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申请公布号 |
US4153741(A) |
申请公布日期 |
1979.05.08 |
申请号 |
US19760710133 |
申请日期 |
1976.07.30 |
申请人 |
RCA CORPORATION |
发明人 |
POLINIAK, EUGENE S.;DESAI, NITIN V. |
分类号 |
G03F7/039;(IPC1-7):B05D3/06 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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