发明名称 Method of making a metalized substrate having a thin film barrier layer
摘要 A method of fabricating a hybrid circuit including a siliceous substrate and thick metal conductors. A thin film barrier layer is provided intermediate the substrate and a vacuum-deposited metal layer, which metal layer is subsequently electroplated to provide the desired metal thickness. The barrier layer, which may suitably be a refractory metal oxide such as the oxides of zirconium, tantalum, titanium, or tungsten, prevents loss of adhesion between the vacuum deposited metal and substrate that occurs during electroplating.
申请公布号 US4153518(A) 申请公布日期 1979.05.08
申请号 US19770852991 申请日期 1977.11.18
申请人 TEKTRONIX, INC. 发明人 HOLMES, ROBERT E.;ZIMMERMAN, ROBERT R.
分类号 H01L23/15;H01L27/01;H05K1/03;H05K3/38;(IPC1-7):C25D5/54 主分类号 H01L23/15
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