| 摘要 |
PROBLEM TO BE SOLVED: To provide a deposition method capable of deposing an even oxide film or nitride film onto a plurality of substrates.SOLUTION: A deposition method is for deposing an oxide film including a predetermined element on a plurality of substrates by using a deposition device comprising: a rotation table 2; a first processing region P1 having a first gas supplying part; a second processing region P2 having a second gas processing part; a separation region D having a separation gas supplying part. The deposition method includes: a step of supplying a separation gas from the first gas supplying part and the separation gas supplying part and the oxide gas from the second gas supplying part, and rotating the rotation table 2 one or more times; a second step of supplying a reaction gas including the predetermined element from the first gas supplying part, the oxide gas from the second gas supplying part, and the separation gas from the separation gas supplying part, and deposing the oxide film including the predetermined element on the substrate; and a step of supplying the separation gas from the first gas supplying part and the separation gas supplying part and the oxide gas from the second gas supplying part, and rotating the rotation table 2 one or more times.SELECTED DRAWING: Figure 6 |
