发明名称 VOLTAGE NONLINEAR RESISTOR MANUFACTURIN PROCESS
摘要 PURPOSE:To form a low varistor voltage and small limit voltage ratio high energy surge absorption element with the small number of pores and excellent temperature characteristics which consists of ZnO containing Bi and non-ohmic developing components, spinel phase compound containing Zn and Sb and nucleus ZnO. CONSTITUTION:(This element) contains 1 to 40 weight percentage of the nucleus ZnO particle consisting of single crystals of approximately 30 to 200mu, which can be obtained by decomposing the sintering body containing approximately 0.1 to 5 mol% of one or more of Ba, Sr, Ca, Na, and K besides the primary component ZnO, in oxide conversion, that is, contains 0.1 to 60 mol% of one or more of Co2O3, MnO2, NiO, and Cr2O3 in addition to 87.5 to 35.0 mol% and 12.5 to 5.0 mol% in oxide conversion. 1 to 50 weight percentage of a spinel phase compound with the primary component Zn7Sb2O12 and Bi are added. The ZnO to which some components to improve voltage nonlinearity and other varistors characteristics are added is mixed, molded, and sintered.
申请公布号 JPS5456198(A) 申请公布日期 1979.05.04
申请号 JP19770122657 申请日期 1977.10.12
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 INADA MASAKI;MAKINO OSAMU;EDA KAZUO;SAKAI MASAYUKI;IGA ATSUSHI;MATSUOKA MICHIO
分类号 H01C7/10;C04B35/00;C04B35/453 主分类号 H01C7/10
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