| 摘要 |
PURPOSE:To reduce oscillation the rshold current by laminating an InGaAsP first clad layer, InGaAs P active layer, InP second clad layer on an InP substrate while defining their compositions and allowing these grow epitaxially out of liquid phase. CONSTITUTION:A In1-xGaxAsyP1-y(0<x<1,0<1) lager 2 which becomes a first clad layer is liquid phase epitaxially grown on a InP substrate 1, and a In1-x,Gax,Asy,P1-y,(0<x<x',0<y<y') layer 3 is similarily liquid phase eptitaxially grown thereon. Next, a InP layer 4 which becomes a second clad layer is likewise epitaxially grown in lamination thereon. Then, the thicknesses become even and yet no undulations are produced on the surface. Furthermore, there are no stacking faults, oscillation threshold current lowers and the device becomes ideally suited for semiconductor laser. |
