| 摘要 |
PURPOSE:To correct the defects of the non-transparent material patterns of a mask using a transparent substrate of two layers of insulation type substrate and conductive material by filling the same through electroplating with the conductive material film as electrode. CONSTITUTION:A transparent conductive film 2 is formed on a glass substrate 1, and non-transparent Cr3, Cr2O3 4 are formed, in which a defect part 5 is produced. An opening 7 is made in the resist 6 over the defect part 5. Following this, the substrate is dipped in a sulfamic acid Ni electrolytic plating bath, and is subjected to electrolytic plating with the conductive film 2 as cathode and Ni as anode, to fill non-transparent Ni 3a in the defect part 5, whereby its thickness is made nearly equal to the thickness of the double layer film of the films 3, 4. The resist is removed to complete the mask. This method enables minute defects to be corrected easily. |
