发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To eliminate warpage of substrate by beforehand depositing metal layers selected from Al-Pd, Ti-Ni, Cr-Au or Ag, or Au.Ga alloy-Ag in this order on a Si substrate surface and mounting the support electrode plate of Cu C-fiber composite material by way of solder here. CONSTITUTION:A metal layer 4 is beforehand fomed on a si substrate 1 and a support electrode 2 mainly composed of Cu and C fibers whose coefficient of thermal expansion has been made nearly the same as that of Si is secured thereto by way of a solder layer 3. Here, the metal layer 4 is constituted by an Al layer 11, Ti or Pd layer 12, Ni or Cr or their alloy layer 13, Au or Ag layer 15 from the substrate 1 side. Then, the laminate does not produce warpage owing to thermal shrinkage even after it undergoes the process of being subjected to heat, hence no stresses are generated in the substrate 1.
申请公布号 JPS5455168(A) 申请公布日期 1979.05.02
申请号 JP19770121452 申请日期 1977.10.12
申请人 发明人
分类号 H01L21/52;H01L21/58;H01L23/12 主分类号 H01L21/52
代理机构 代理人
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