Complementary MOSFET device

摘要

A CMOS FET device having a P well layer diffused in an N type semiconductor substrate, a P channel MOS transistor formed on the N type semiconductor substrate, and an N channel MOS transistor provided in the P well layer, wherein the source of the P channel MOS transistor is made to have the same potential as the N type semiconductor substrate and for the source of the N channel MOS transistor is made to have the same potential as the P well layer, thereby suppressing the operation of a parasitic bipolar transistor whose base is constituted by the N type semiconductor substrate and/or a parasitic bipolar transistor whose base is formed of the P well layer.