| 摘要 |
The problem of a race condition in the precharged drain type FET read only storage circuits is avoided in the invention disclosed herein, by applying the bit decode signal to the source of the array device, so that the drain cannot be discharged through the FET array device unless both the bit line connected to the source and word line connected to the gate have on-signals. Thus, the memory circuit can be operated in a faster cycle because the word and bit signals may be made coincident. |
