发明名称 |
Semiconductor apparatus |
摘要 |
A field-effect transistor device is provided having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.
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申请公布号 |
US4152714(A) |
申请公布日期 |
1979.05.01 |
申请号 |
US19780869980 |
申请日期 |
1978.01.16 |
申请人 |
HONEYWELL INC |
发明人 |
DAUGHTON, JAMES M;HENDRICKSON, THOMAS E |
分类号 |
H01L29/80;H01L21/337;H01L29/04;H01L29/06;H01L29/08;H01L29/10;H01L29/417;H01L29/78;H01L29/808;(IPC1-7):H01L29/72 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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