发明名称 X-ray lithography mask and method for manufacturing the same
摘要 An x-ray lithography mask including a thick silicon peripheral rib with a window formed therein and a multi-layered membrane transparent to x-rays and visible light supported by the rib and covering the window. The membrane consists essentially of at least two silicon nitride layers and at least one silicon oxide layer sandwiched between the silicon nitride layers. The silicon nitride layers are preferably positioned at opposite surfaces of the multi-layered membrane.
申请公布号 US4152601(A) 申请公布日期 1979.05.01
申请号 US19770843485 申请日期 1977.10.19
申请人 NIPPON ELECTRIC CO LTD;NIPPON TELEGRAPH & TELEPHONE PUB CORP 发明人 IIDA, YASUO;KADOTA, TOSHIKI;ONO, TOSHIRO;SUZUKI, KATSUMI
分类号 G03F1/00;G03F1/14;G03F1/16;H01L21/027;(IPC1-7):G03B41/16 主分类号 G03F1/00
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