| 发明名称 |
Voltage dividing circuit in IC structure |
| 摘要 |
A voltage dividing circuit comprises a plurality of series-connected insulated-gate FETs, each having its gate and drain short-circuited with each other and its source and substrate short-circuited with each other. A substrate in which one FET is formed is isolated from another substrate in which another FET is formed.
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| 申请公布号 |
US4152716(A) |
申请公布日期 |
1979.05.01 |
| 申请号 |
US19770756866 |
申请日期 |
1977.01.04 |
| 申请人 |
HITACHI LTD |
发明人 |
ARAI, TAMOTU;TORII, SHUICHI |
| 分类号 |
G01R15/04;G01R19/165;G05F3/24;H01L21/822;H01L27/04;H01L27/088;H01L29/78;H03F1/30;H03H11/24;(IPC1-7):H01L27/02 |
主分类号 |
G01R15/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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