| 发明名称 |
SISTEMA PERFEZIONATO PER LA FABRICAZIONE DI RESISTORI SU WAFER DI SILICIO E SIMILI |
| 摘要 |
High value resistors, of the order of 109 ohms/square and higher, are fabricated by implanting zinc or lead ions into a silicon dioxide layer over a silicon chip containing electrical components and/or circuits. |
| 申请公布号 |
IT1031241(B) |
申请公布日期 |
1979.04.30 |
| 申请号 |
IT19750019693 |
申请日期 |
1975.01.29 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORP |
发明人 |
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| 分类号 |
H01L21/3205;H01L21/02;H01L21/265;H01L21/3115;H01L21/768;H01L23/522;(IPC1-7):01L/ |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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