| 摘要 |
PURPOSE:To perform wire bonding of semiconductor devices through laser radiation. CONSTITUTION:A wire 4 let out from a capillary 7 is pressed and contacted to the Al vapor deposition wiring of a Si substrate 3 and the wire 4 is radiated with a fine laser beam, whereby it is fused and bonded. Since this method enables high energies to be focused at a minute point, wire bonding may be performed without impairing element characteristics, the need for plating on the surface is eliminated, and the use of inexpensive Al wirings is made possible. |
