| 摘要 |
PURPOSE:To allow light produced at a distortion quantum well structure to be reflected at a light reflection surface and projected vertically from a rear side of a GaAs semiconductor substrate by making a forbidden band width of the distortion quantum well structure smaller than that of the GaAs semiconductor substrate. CONSTITUTION:An n-type clad layer 11 consisting of n-type Al0.7Ga0.3As, photoguide layers 12, 16 consisting of Al0.2Ga0.8As, quantum barrier layers 13, 15 consisting of GaAs, a distortion quantum well layer 14 consisting of In0.35 Ga0.65As, a p-type clad layer 17 consisting of p-type Al0.7Ga0.3As, and a cap layer 18 consisting of p-type GaAs are formed on a GaAs substrate 10 by crystal growth through molecular beam epitaxial method. Then dry etching is made to a surface of the GaAs substrate 10 at a direction of 45 deg., and a metal film 19 is provided thereon to form a photoreflection surface 20. After a p-electrode 21 and an n-electrode 22 are formed through evaporation, they are fused to a heat sink 23. Light output can be thereby acquired in a vertical direction from a rear of a substrate against the substrate. |
