| 摘要 |
PURPOSE:To obtain a ferrodielectric memory having easy manufacture, satisfactory write/read characteristics and high reliability by so forming a thin ferrodielectric film as to be brought into contact with the source or drain region of a MOSFET as the first electrode of the source or drain capacitor, and composing a ferrodielectric capacitor of a second electrode laminated on the thin ferrodielectric film. CONSTITUTION:A capacitor is composed of N-type source, drain regions 5 of N-type impurity of a MOSFET as lower electrodes, a thin ferrodielectric film 8 of bismuth titanate formed on the surface thereof, and a thin tungsten film formed on the upper layer as an upper electrode 9. A gate electrode 4 is continuously arranged in one direction of a memory array to form a word line. An interlayer insulating film 7 covering the upper layer is formed, a contact hole is formed, and a bit line 14 is connected. Since the thin ferrodielectric film is formed not on the gate electrode but brought into direct contact with the source, drain regions, a complicated step of patterning the interlayer insulating film can be eliminated. |
