| 摘要 |
A plate-like silicon crystal having a columnar structure formed along the direction of the shortest axis, produced by cooling molten silicon, which may contain a doping agent, in a temperature gradient between the two largest boundary surfaces of the melt, one of which has a maximum temperature of 1200 DEG C., and the opposite surface being at least 200 DEG to 1000 DEG C. higher, but below the melting point of silicon. |
