| 摘要 |
PURPOSE:To improve break-over characteristics of a SCR part by forming the reverse conducting SCR, by constituting a reverse parallel diode especially inside it. CONSTITUTION:The p-type layer 17 occupies one part of one main surface and the 2nd n-type layer 18 occupies the remaining part and is exposed to the main surface. On the other surface, n-type layer 20 occupies partially the opposite part to layer 17 and on the remaining part, the 3rd p-type layer 19 is exposed. On the other hand, the SCR region in the pnpn structure covers the reverse conducting diode in the (pn) structure of layers 19 and 18. In this constitution, a current flowing into the negative resistance region of the SCR part is small and, equivalently, a break- over current becomes small, so that the power consumption of the circuit employing this element can be reduced. In addition, an element uniform in VBO is recommended for a gas ignition device, etc. |
