Process of producing semiconductor thermally sensitive switching element by selective implantation of inert ions in thyristor structure

摘要

A planar pnpn thyristor structure is prepared to include an SiO2 film with a thickness of about 10,000A wholly disposed on its main face to which pn junctions are exposed. That portion of the SiO2 film underlaid with an exposed edge of a collector junction and its adjacent portion are replaced by another SiO2 film about 1,000A thick. Then argon ions Ar+ with an implantation energy of 200 KeV are implanted into the thyristor structure through both films to permit a low lifetime region including a large number of lattice defects to be formed only in its main face portion overlaid with the thin SiO2 film resulting in a semiconductor thermally sensitive switching element effecting the switchover at a sufficiently low temperature.