Method of manufacturing a semiconductor device

摘要

A method of manufacturing a semiconductor device having a transistor structure in which the emitter zone comprises a lower-doped region adjoining the base zone and a more highly-doped region adjoining the surface. According to the invention, the more highly-doped part is obtained by the introduction of doping atoms through an undoped polycrystalline layer provided on the surface. Preferably, a thin silicon nitride or silicon oxide layer is provided between the surface and the polycrystalline silicon layer prior to providing the latter.