Method for manufacturing a layer of amorphous silicon usable in an electronic device

摘要

A method aiming at imparting to the amorphous silicon properties which are compatible with the possibility of modifying by doping or field effect the position of the Fermi level in the volume of the amorphous silicon, a prime requirement for the operation of semiconductor devices. The method comprises a first step of depositing a layer of amorphous silicon onto a substrate under conditions ensuring the purity of the deposit obtained, then a second step wherein the deposit is subjected to a heat treatment consisting in maintaining the deposit in the atmosphere of a plasma containing atomic hydrogen for saturating the existing broken chemical bonds responsible for a parasitic electric conductivity.