Feldeffekttransistor und Verfahren zu seiner Herstellung

摘要

To prevent instability due to migration of oxygen out of the SiO2 insulation layer between the Si body and the, esp. Al gate electrode, thus lowering the effective gate threshold (peak inverse) voltage, a layer of material free of oxygen, esp. Si3N4, is interposed as a screen. This screen is thin relative to the insulation layer, e.G. is 50-300A thick.