| 摘要 |
PURPOSE:To realize a developing mehtod for a resist film without contamination by making use of a difference in removement speed by mixed-gas plasma between the exposed part and unexposed part of a photo resist film. CONSTITUTION:Inside reaction tube 10 of quarz galss wound with high-frequency coil 14, substrates 1 standing on rack 2 are installed and the tube is sealed hermetically by using cover 11 of quarz glass. Next, mixed gas 15 is flowed from intake 12 provided to reaction tube 10 to cause gas plasma gas 17 having contributed to the generation of plasma is exhausted from outlet 13. At this time, the mixed gas contains aliphatic hydrocarbon such as methane and ethane or aromatic hydrocarbon such as xylene and inert gas. It is also recommended to use either one of mixed gas of alkaline vapor and inert gas or mixed gas of oxygen and inert gas, or mixed gas through the combination between the both. In this way, mixedgas plasma is used to resolve and remove the resist. |
