| 摘要 |
PURPOSE:To establish the device giving the light emitting function and the photo electric conversion function for the same location for the photo detection and the photo emission with the same location. CONSTITUTION:The n type Ga0.7Al0.3As2, p type GaAs 3, p type Ga0.7Al0.3As4, and n type GaAs 5 are laminated on the n type GaAs 1. At the center of the layer 5, Zn is diffused, p type region 6 is placed, the light emitting region 17 is controlled and photo detection function is given. Further, the groove 18 is selectively formed on the substrate 1, and the photo reception and giving is enabled without any loss among the optical fiber 13, light emitting region 17 and photo electric conversion section. Next, the electrodes 12 and 13 of ring shape and the photo detection electrode 11 are provided. Further, when power is applied from the signal source 14 to the electrodes 11 and 12, the region 17 is illuminated and light is received with the optical fiber. The light from the fiber reaches the layer 3 via the window 19, and the photo electromotive force between the electrodes 13 and 12 is measured 16 via the resistor 15. |
