| 摘要 |
A level shifter using complementary metal oxide semiconductor (CMOS) transistors is provided. A first transistor couples a first voltage to a node of the level shifter circuit, and the first transistor is controlled by an input signal. A P-channel and an N-channel MOS device are connected in series between the first voltage and a second voltage. The gate electrodes of the P-channel and N-channel MOS devices are connected to the node. An output for the level shifter circuit is taken from a junction formed by the P-channel and N-channel MOS devices. A resistance is coupled between the gate electrodes of the P-channel and the N-channel MOS devices and the second voltage.
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