Apparatus for the treatment of wafer materials by plasma reaction

摘要

An automatic apparatus for the treatment of wafer materials by plasma reaction is proposed in which the wafers are sent into the plasma reaction chamber one by one and yet the atmospheric air is never introduced into the reaction chamber between the successive reaction steps for two wafers by use of two rotary vacuum valves which also serve as wafer transmitters into and out of the reaction chamber and a rotary wafer table inside the reaction chamber, all being installed on an inclined base table to effect the downward spontaneous movement of the wafer under treatment by gravity.