| 摘要 |
In a high-voltage thyristor comprising a semiconductor body having contiguous pnpn four layers, and opposed anode and cathode electrodes and a gate electrode provided for the semiconductor body, one of p-base and n-base regions having an impurity concentration higher than the other has an impurity concentration which is no more than 8x1015 atoms/cm3 in the vicinity of a junction between the one base region and an adjacent emitter region and which has a gradually decreasing gradient toward the other contiguous base region. The one base region has a sheet resistance of 500 to 1500 ohms/ &squ& . The realization of a high-voltage, large-diameter and large-current thyristor can be ensured. |
