| 摘要 |
Integrated electrically programmable read only memory cell having at least two back-to-back diodes. A first diode is formed by a planar junction (7) between two superimposed regions (2, 6), the second diode is programmable and is formed by a lateral junction (11) between two coplanar zones (9, 10) of a thin semi-conductor layer isolated from the body by an insulating layer (8) having a contact aperture (18). |
