摘要 |
<p>The structures are of conducting, semiconducting or insulating type, and are defined by selective illumination of a photosensitive varnish layer. This material is applied on the whole material producing the structures, with small thickness variations. The layer is then removed by a development or etching process, leaving behind a mask defining the structures. The varnish layer (3) is at first completely exposed to monochromatic light and developed. Exposure and development times are such, that stepped varnish areas are produced in the layer thickness. The heights of the steps correspond to a half-wavelength, or its multiple, of the light used for exposure.</p> |