发明名称
摘要 A method and apparatus for positively introducing dopants into semiconductor crystals via crucible-free zone melting whereby a polycrystalline rod is mounted at opposite ends thereof in a housing which includes an annular induction heating coil surrounding a section of the rod for producing a melt zone at such section and a thin dopant source rod having a predetermined amount of dopant therein is controllably fed into the melt zone so that a positively determinable amount of dopant is provided in the recrystallized rod.
申请公布号 DE2338338(C3) 申请公布日期 1979.04.12
申请号 DE19732338338 申请日期 1973.07.27
申请人 SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN 发明人 KELLER, WOLFGANG, DR., 8000 MUENCHEN
分类号 C30B13/10;H01L21/208;(IPC1-7):01J17/10 主分类号 C30B13/10
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